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CHARACTERIZING LOCALIZED STRAIN OF IN0.83Al0.17As/In0.83Ga0.17As DETECTOR USING LOW FREQUENCY ATOMIC FORCE ACOUSTIC MICROSCOPE

Author

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  • WEITAO SU

    (Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, P. R. China†Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China)

  • HONGLEI DOU

    (Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, P. R. China)

  • DEXUAN HUO

    (Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, P. R. China)

  • GUOLIN YU

    (#x2021;State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China)

  • NING DAI

    (#x2021;State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China)

Abstract

Localized strain accumulation and related defects strongly affect the performance of optoelectronic detectors. However, characterizing distribution of the localized strain and defects still challenges usability and spatial resolution of many measurements. In current study, the defects and surface strain accumulation of In0.83Al0.17As/In0.83Ga0.17As multilayer detectors are investigated using low-frequency atomic force acoustic microscope (AFAM) and Raman spectroscopy. With AFAM, the strain accumulation and defects can be easily identified and measured with spatial resolution as good as that of atomic force microscope (AFM).

Suggested Citation

  • Weitao Su & Honglei Dou & Dexuan Huo & Guolin Yu & Ning Dai, 2016. "CHARACTERIZING LOCALIZED STRAIN OF IN0.83Al0.17As/In0.83Ga0.17As DETECTOR USING LOW FREQUENCY ATOMIC FORCE ACOUSTIC MICROSCOPE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 23(01), pages 1-7, February.
    • Handle: RePEc:wsi:srlxxx:v:23:y:2016:i:01:n:s0218625x15501103
    DOI: 10.1142/S0218625X15501103
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