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INFLUENCE OF ANNEALING TREATMENT ON THE PHYSICAL PROPERTIES OFInAlNFILMS

Author

Listed:
  • NAVEED AFZAL

    (Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia)

  • MUTHARASU DEVARAJAN

    (Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia)

  • M. A. AHMAD

    (Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia)

  • KAMARULAZIZI IBRAHIM

    (Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia)

Abstract

In this work, pure indium and aluminum targets were co-sputtered in a reactive argon–nitrogen environment at 200°C to depositInAlNfilm on theGaAssubstrate in the presence of aZnObuffer layer. The as-grown film was annealed at 750°C for 1 h in a high temperature furnace under nitrogen ambient. XRD pattern of the as-grown film did not display any diffraction peak relating to theInAlNdue to its poor structural crystallinity, however, the annealed film exhibitedInAlNdiffraction peaks corresponding to (002), (101) and (102) planes. A significant increase in the grain size and the surface roughness was observed after the films' annealing. Raman spectroscopy revealedA1(LO) andE2(high) phonon modes whereas the PL analysis showed a luminescence peak at 2 eV in the annealed film. The Hall measurements indicated an increase in the carrier concentration and electron mobility after the annealing which was accompanied by a decrease in electrical resistivity of the film. The dark current–voltage(I–V)characteristics of the as-grown and the annealed films were also recorded to investigate the barrier height and the ideality factor.

Suggested Citation

  • Naveed Afzal & Mutharasu Devarajan & M. A. Ahmad & Kamarulazizi Ibrahim, 2015. "INFLUENCE OF ANNEALING TREATMENT ON THE PHYSICAL PROPERTIES OFInAlNFILMS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 22(05), pages 1-9.
    • Handle: RePEc:wsi:srlxxx:v:22:y:2015:i:05:n:s0218625x15500626
    DOI: 10.1142/S0218625X15500626
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