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ELECTRIC PROPERTIES OFMn-DOPEDBiFeO3THIN FILM DEPOSITED ON ITO SUBSTRATE

Author

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  • J. M. LUO

    (School of Physics and Optical Information Sciences, Jiaying University, Meizhou 514015, Guangdong, P. R. China)

Abstract

NanoscaleMn-dopedBiFeO3thin film with a perovskite crystal structure has been fabricated on ITO substrate using chemical solution deposition, which shows a large dielectric constant and a low leakage current. The ferroelectric test result demonstrates that large values of remanent polarization and coercive field can be attained in this structure. Additionally, stable resistive switching characteristics with an analysis of current conduction mechanisms have also been investigated, which can be attributed to the redistribution of oxygen vacancies under an electric field. This study suggests thatMn-doped BFO thin film grown on ITO substrate may provide a potential application for multifunctional memories.

Suggested Citation

  • J. M. Luo, 2015. "ELECTRIC PROPERTIES OFMn-DOPEDBiFeO3THIN FILM DEPOSITED ON ITO SUBSTRATE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 22(04), pages 1-4.
    • Handle: RePEc:wsi:srlxxx:v:22:y:2015:i:04:n:s0218625x15500481
    DOI: 10.1142/S0218625X15500481
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