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IMPROVEMENT OF RETENTIVITY INTiOx/HfOxBILAYER STRUCTURE FOR LOW POWER RESISTIVE SWITCHING MEMORY APPLICATIONS

Author

Listed:
  • PRANAB KUMAR SARKAR

    (Department of Physics, National Institute of Technology Silchar, Silchar-788010, Assam, India)

  • ASIM ROY

    (Department of Physics, National Institute of Technology Silchar, Silchar-788010, Assam, India)

Abstract

This paper reports the bipolar resistive switching (BRS) characteristics inAl/Ti/TiOx/HfOx/Ptheterostructure during a DC sweep cycle with current compliance (CC) of 250 μA. The improvement in the switching performance in a CMOS compatibleAl/Ti/TiOx/HfOx/Ptmemory cell has been observed. The improvement is due to oxygen-richHfOxlayer insertion in simple metal-insulator-metal (MIM) sandwich structure. Analysis of current–voltage (I–V) characteristics revealed the trap-controlled space charge limited current (TC-SCLC) conduction mechanism is the most suitable mechanism signifying the dominant current conduction in all the bias regions and resistance states. Furthermore, this bilayer memory stack exhibits a tight distribution of switching parameters, good switching endurance up to 105cycles, and good data retention of > 104s at 85°C.

Suggested Citation

  • Pranab Kumar Sarkar & Asim Roy, 2015. "IMPROVEMENT OF RETENTIVITY INTiOx/HfOxBILAYER STRUCTURE FOR LOW POWER RESISTIVE SWITCHING MEMORY APPLICATIONS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 22(02), pages 1-6.
    • Handle: RePEc:wsi:srlxxx:v:22:y:2015:i:02:n:s0218625x15500316
    DOI: 10.1142/S0218625X15500316
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