Author
Listed:
- YA MING SUN
(State Key Lab of Superhard Material and College of Physics, Jilin University, Changchun 130023, P. R. China)
- DONG LONG
(Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, P. R. China)
- XIANG CHENG MENG
(Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, P. R. China)
- ZHONG HUA
(Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, P. R. China)
- BO LI
(Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dong Nanhu Road 3888, Changchun 130012, P. R. China)
- BIN YAO
(State Key Lab of Superhard Material and College of Physics, Jilin University, Changchun 130023, P. R. China;
Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education, College of Physics, Jilin University, Changchun 130012, P. R. China)
Abstract
Cu2ZnSnS4thin films were prepared on soda-lime glass by sulfurization of theCu/Sn/ZnSprecursors. The microstructure, morphology and optical properties of the films were investigated by X-ray diffraction (XRD), Raman scattering (Raman), scanning electron microscopy (SEM) and UV-visible spectrophotometer (UV-Vis). The SEM images of the precursor and the thin films annealed at different temperatures are very different due to their different surface products. The absorption spectrum shifts to high-wave band region with increasing annealing temperatures. The precursor thin film annealed at 500°C for 2 h forms a single CZTS phase with kesterite structure and the bandgap is estimated to be 1.54 eV.
Suggested Citation
Ya Ming Sun & Dong Long & Xiang Cheng Meng & Zhong Hua & Bo Li & Bin Yao, 2015.
"THE INFLUENCE OF SYNTHESIZING TEMPERATURES ON THE PROPERTIES OF THECu/Sn/ZnSPRECURSOR THIN FILMS,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 22(01), pages 1-5.
Handle:
RePEc:wsi:srlxxx:v:22:y:2015:i:01:n:s0218625x15500092
DOI: 10.1142/S0218625X15500092
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