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INVESTIGATION OFTa/Ni–AlINTEGRATED FILM USED AS A DIFFUSION BARRIER LAYER BETWEENCuANDSi

Author

Listed:
  • LIM YANG

    (Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China)

  • SHI JIE WANG

    (Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China)

  • JI CHUAN HUO

    (Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China)

  • XIAO HONG LI

    (Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China)

  • JIAN XIN GUO

    (Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China)

  • XIU HONG DAI

    (Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China)

  • LIAN XI MA

    (Department of Physics, Blinn College, Bryan, TX 77805, USA)

  • XIANG YI ZHANG

    (State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Hebei 066004, P. R. China)

  • BAO TING LIU

    (Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China)

Abstract

Ta (3.3 nm)/Ni–Al(3.3 nm) integrated films deposited onSisubstrates by magnetron sputtering, annealed at various temperatures in a ultra-high vacuum, have been studied as diffusion barrier layers betweenCuandSifor application inCuinterconnection. The images of transmission electron microscopy (TEM) prove that the cross-sectional interfaces ofCu/Ta/Ni–Al/Sisample annealed at 600°C are clear and sharp. NoCu–silicide peaks can be found from the X-ray diffraction (XRD) patterns of the 850°C annealed sample, but the sheet resistance of the sample increases abruptly. Moreover, large grooves are found from the image of atomic force microscopy (AFM) for the 850°C annealed sample, implying the failure of the diffusion barrier. The integratedTa/Ni–Albarrier layer retains thermally stable nature up to at least 800°C, indicating that theTa/Ni–Alintegrated film is an excellent diffusion barrier betweenCuandSi.

Suggested Citation

  • Lim Yang & Shi Jie Wang & Ji Chuan Huo & Xiao Hong Li & Jian Xin Guo & Xiu Hong Dai & Lian Xi Ma & Xiang Yi Zhang & Bao Ting Liu, 2014. "INVESTIGATION OFTa/Ni–AlINTEGRATED FILM USED AS A DIFFUSION BARRIER LAYER BETWEENCuANDSi," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 21(06), pages 1-5.
    • Handle: RePEc:wsi:srlxxx:v:21:y:2014:i:06:n:s0218625x14500796
    DOI: 10.1142/S0218625X14500796
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