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TRANSPORT PROPERTIES OFCrO2(100) FILM GROWN ONTiO2BY A SIMPLE ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITION

Author

Listed:
  • LIANG XIE

    (Department of Physical and Chemical Sciences, North China University of Technology, Beijing 100144, P. R. China)

  • JIN ZHI ZHANG

    (Department of Physical and Chemical Sciences, North China University of Technology, Beijing 100144, P. R. China)

  • NAI YI CUI

    (Department of Physical and Chemical Sciences, North China University of Technology, Beijing 100144, P. R. China)

  • HONG GUANG ZHANG

    (College of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China)

Abstract

EpitaxialCrO2(100)-oriented film was successfully fabricated onTiO2(100) substrate by a simple chemical vapor deposition in a two-zone furnace with oxygen flow from aCrO3precursor. The transport measurements show that theCrO2film is metallic with a small residual resistivity 4 μΩ cm down to 0.6 K. The temperature dependence of resistivity was best described by a phenomenological expressionρ(T) = ρ0+ AT2exp(-Δ/T)over the range of 0.6–300 K with Δ = 123.6 K. The magnetization of the film becomes saturated in a relatively low field with a small coercive field. The temperature dependence of magnetization shows Bloch'sT3/2law and the slope of the curve suggests a critical wavelength of λΔ~ 26.6 Å beyond which spin-flip scattering becomes important.

Suggested Citation

  • Liang Xie & Jin Zhi Zhang & Nai Yi Cui & Hong Guang Zhang, 2014. "TRANSPORT PROPERTIES OFCrO2(100) FILM GROWN ONTiO2BY A SIMPLE ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITION," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 21(04), pages 1-5.
    • Handle: RePEc:wsi:srlxxx:v:21:y:2014:i:04:n:s0218625x14500553
    DOI: 10.1142/S0218625X14500553
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