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FABRICATION AND CHARACTERIZATION OF HYDROGEN SENSORS BASED ON TRANSFERRED GRAPHENE SYNTHESIZED BY ANNEALING OFNi/3C-SiCTHIN FILMS

Author

Listed:
  • KANG-SAN KIM

    (School of Electrical Engineering, University of Ulsan, 93 Daehak-ro, Nam-gu, Ulsan 680-749, Republic of Korea)

  • GWIY-SANG CHUNG

    (School of Electrical Engineering, University of Ulsan, 93 Daehak-ro, Nam-gu, Ulsan 680-749, Republic of Korea)

Abstract

This paper presents the formation of graphene and its application to hydrogen sensors. In this work, the graphene was synthesized by annealing process of3C-SiCthin films withNitransition layer. TheNifilm was coated on a3C-SiClayer grown thermal oxidedSisubstrates and used extracts of the substrate's carbon atoms under rapid thermal annealing (RTA). Various parameters such as ramping speed, annealing time and cooling rate were evaluated for the optimized combination allowed for the reproducible synthesis of graphene using3C-SiCthin films. Transfer process performed byNilayer etching in HF solution and transferred graphene ontoSiO2shows the IG/IDratio of 2.73. Resistivity hydrogen sensors were fabricated and evaluated withPdandPtnanoparticles in the room temperature with hydrogen range of 10–50 ppm. The response factor of devices with thePdcatalyst was 1.3 when exposed to 50 ppm hydrogen and it is able to detect as low as 10 ppm hydrogen at room temperature.

Suggested Citation

  • Kang-San Kim & Gwiy-Sang Chung, 2014. "FABRICATION AND CHARACTERIZATION OF HYDROGEN SENSORS BASED ON TRANSFERRED GRAPHENE SYNTHESIZED BY ANNEALING OFNi/3C-SiCTHIN FILMS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 21(04), pages 1-7.
    • Handle: RePEc:wsi:srlxxx:v:21:y:2014:i:04:n:s0218625x14500504
    DOI: 10.1142/S0218625X14500504
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