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EFFECT OFAlDOPING CONCENTRATION ON MICROSTRUCTURE, PHOTOELECTRIC PROPERTIES AND DOPED MECHANISM OF AZO FILMS

Author

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  • YING XU

    (College of Materials Science and Engineering, Hebei United University, Hebei Province Key Laboratory of Inorganic Nonmetallic Materials, Tangshan 063009, P. R. China)

  • YANQING CAI

    (School of Materials Science and Metallurgy, Northeastern University, Shenyang 110004, P. R. China)

  • LINYAN HOU

    (College of Materials Science and Engineering, Hebei United University, Hebei Province Key Laboratory of Inorganic Nonmetallic Materials, Tangshan 063009, P. R. China)

  • PENGHUA MA

    (College of Materials Science and Engineering, Hebei United University, Hebei Province Key Laboratory of Inorganic Nonmetallic Materials, Tangshan 063009, P. R. China)

Abstract

AldopedZnO(AZO) thin films were deposited on a glass substrate by atmospheric pressure chemical vapor deposition (APCVD) method. Effect ofAldoping concentration on microstructure, photoelectric properties and doped mechanism of AZO thin films were investigated. The analysis results revealed that the structural properties of the films possessed crystalline structure with a preferred (002) orientation. The best crystallization quality and minimum electrical resistivity was obtained at 5 at.%Aldoped films and the minimum resistivity was 6.6 × 10-4Ω ⋅ cm. Uniform granular grains were observed on the surface of AZO films, and the average optical transmittance was above 80% in the visible range. The doped mechanism of AZO films was analyzed as follows. WithAldoping inZnOfilms,AlZnsubstitute andAliinterstice were produced, which decreased the resistivity of films. While after the limit value and with the continuing increase ofAldoping concentration, free electrons were consumed and the resistivity of films increased.

Suggested Citation

  • Ying Xu & Yanqing Cai & Linyan Hou & Penghua Ma, 2014. "EFFECT OFAlDOPING CONCENTRATION ON MICROSTRUCTURE, PHOTOELECTRIC PROPERTIES AND DOPED MECHANISM OF AZO FILMS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 21(03), pages 1-7.
    • Handle: RePEc:wsi:srlxxx:v:21:y:2014:i:03:n:s0218625x14500401
    DOI: 10.1142/S0218625X14500401
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