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REACTION SIMULATION AND EXPERIMENT OF ACl2/ArINDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Author

Listed:
  • JIE GE

    (Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China)

  • XUAN LIU

    (Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China)

  • YI YANG

    (Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China)

  • YIXU SONG

    (Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Intelligent Technology and Systems, Department of Computer Science & Technology, Tsinghua University, Beijing 100084, P. R. China)

  • TIANLING REN

    (Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China)

Abstract

As the key feature size keeps shrinking down, inductively coupled plasma (ICP) has been widely used for etching. In this study, a commercial ICP etcher filled withCl2/Armixture was simulated. The simulation was based on a commercial software CFD-ACE+, which is a multi-module solver. For the simulation part, CFD-ACE module was used for reactor scale and CFD-TOPO module was used for feature scale simulation. We have reached a reasonable agreement between the simulative and experimental results. Specifically, the different causes of sidewall bowing and microtrenching were discussed. We also analyzed the causes of special profile as trench width scaling down. Moreover, the agreement validates correctness of the chemistry mechanism, so it can be used as guidance for the process designing and manufacturing equipment improvement.

Suggested Citation

  • Jie Ge & Xuan Liu & Yi Yang & Yixu Song & Tianling Ren, 2014. "REACTION SIMULATION AND EXPERIMENT OF ACl2/ArINDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 21(03), pages 1-15.
    • Handle: RePEc:wsi:srlxxx:v:21:y:2014:i:03:n:s0218625x14500383
    DOI: 10.1142/S0218625X14500383
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