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THERMOELECTRIC AND MAGNETO-THERMOELECTRIC PROPERTIES OFGa-DOPEDZnOTHIN FILMS BY RF MAGNETRON SPUTTERING

Author

Listed:
  • H. LIU

    (Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China)

  • L. FANG

    (Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China)

  • F. WU

    (Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China)

  • D. X. TIAN

    (Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China;
    Department of Applied Physics, Chongqing Normal University, Chongqing 400030, P. R. China)

  • W. J. LI

    (Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China)

  • Y. LU

    (Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China)

  • C. Y. KONG

    (Department of Applied Physics, Chongqing Normal University, Chongqing 400030, P. R. China)

  • S. F. ZHANG

    (College of Software, Chongqing College of Electronic Engineering, Chongqing 401331, P. R. China)

Abstract

Zn(1-x)GaxOthin films (x = 0.01, 0.03, 0.05, 0.07 named as GZO1, GZO2, GZO3, GZO4, respectively) were deposited on glass substrates by RF magnetron sputtering. The crystal structure, electrical, thermoelectric and magneto-thermoelectric properties of GZO films were investigated. It is found that all the GZO films are polycrystalline and preferentially oriented in thec-axis. The electrical resistivity of GZO films decreased first with increasingGadoping content before it reached a minimum atx = 0.05, and then increased with further increasingGadoping content. The magnetic fields (B) ranging from 0 to 1.5 T are perpendicularly applied to the films to study the magneto-thermoelectric properties. It is observed that the absolute values of Seebeck coefficients (|S|) of GZO1, GZO2, GZO3 show marked variation with magnetic field and obtain the maximum value atB = 0.5T. Whereas the|S|value of GZO4 fluctuates slightly with magnetic field and reaches its peak atB = 1.0T. The magneto-thermoelectric properties are analyzed and we propose that this behavior is mainly attributed to the effect of magnetic field on the electron transport.

Suggested Citation

  • H. Liu & L. Fang & F. Wu & D. X. Tian & W. J. Li & Y. Lu & C. Y. Kong & S. F. Zhang, 2014. "THERMOELECTRIC AND MAGNETO-THERMOELECTRIC PROPERTIES OFGa-DOPEDZnOTHIN FILMS BY RF MAGNETRON SPUTTERING," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 21(03), pages 1-8.
    • Handle: RePEc:wsi:srlxxx:v:21:y:2014:i:03:n:s0218625x14500334
    DOI: 10.1142/S0218625X14500334
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