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STRUCTURE EVOLUTION AND ELECTRIC PROPERTIES OFTaNFILMS DEPOSITED ONAl2O3-BASED CERAMIC AND GLASS SUBSTRATES BY MAGNETRON REACTIVE SPUTTERING

Author

Listed:
  • YAN MING ZHOU

    (School of Physics & Microelectronics Science, Hunan University, Hunan 410082, P. R. China)

  • YANG ZHAO MA

    (School of Physics & Microelectronics Science, Hunan University, Hunan 410082, P. R. China)

  • ZHONG XIE

    (School of Physics & Microelectronics Science, Hunan University, Hunan 410082, P. R. China)

  • MING ZHI HE

    (School of Physics & Microelectronics Science, Hunan University, Hunan 410082, P. R. China)

Abstract

Structure evolution and electric properties of tantalum nitride(TaN)films deposited onAl2O3-based ceramic and glass substrates by magnetron reactive sputtering were carried out as a function of theN2-to-Arflow ratio. TheTaNthin films onAl2O3-based ceramic substrates grow with micronclusters composed of numerous nanocrystallites, contains from single-phase ofTa2Ngrains toTaN, and exhibits high defect density, sheet resistance and negative TCR as theN2-to-Arflow ratio continuously increases. However, the films on the glass substrates grow in the way of sandwich close-stack, contains from single-phase ofTa2Ngrains toTaNandTa3N5phases with the increase ofN2-to-Arflow ratio. These results indicate that theN2-to-Arflow ratio and surface characteristic difference of substrates play a dominant effect on the structure and composition of theTaNfilms, resulting in different electrical properties for the films onAl2O3-based ceramic and the samples on glass substrates.

Suggested Citation

  • Yan Ming Zhou & Yang Zhao Ma & Zhong Xie & Ming Zhi He, 2014. "STRUCTURE EVOLUTION AND ELECTRIC PROPERTIES OFTaNFILMS DEPOSITED ONAl2O3-BASED CERAMIC AND GLASS SUBSTRATES BY MAGNETRON REACTIVE SPUTTERING," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 21(02), pages 1-12.
    • Handle: RePEc:wsi:srlxxx:v:21:y:2014:i:02:n:s0218625x14500280
    DOI: 10.1142/S0218625X14500280
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