Residual Stresses In Oblique Incidence Deposited Alumina Thin Film

Residual stresses of alumina thin film deposited on silicon substrate by using electron beam evaporation with oblique angle deposition (OAD) method are studied. The growth parameters that affect the residual stresses of alumina thin film, such as the substrate temperature, the deposition rate, the film thickness, the inclined angle, and the testing temperature are discussed. The results show that the tensile stress value decreases with the increasing substrate temperature, and the compressive stress value increases with the increasing substrate temperature at various inclined angles. Along with the deposition rate increasing, the residual stress value decreases at various inclined angles. With the increasing film thickness, the residual stress value decreases at various inclined angles. With the increasing testing temperature, the residual stress value increases at various inclined angles. While the alumina thin film residual stress value is small at high inclined angle. By choosing the appropriate film preparation parameters, the alumina thin film residual stress is effectively controlled.