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INDIUM SELENIDE THIN FILMS BY LASER IRRADIATION OFIn/SeLAYERED STRUCTURE

Author

Listed:
  • R. E. ORNELAS-ACOSTA

    (Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León-66450, México)

  • S. SHAJI

    (Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León-66450, México;
    Universidad Autónoma de Nuevo León, Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología, Apodaca, Nuevo León-66600, México)

  • D. AVELLANEDA

    (Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León-66450, México)

  • G. A. CASTILLO

    (Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León-66450, México)

  • T. K. DAS ROY

    (Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León-66450, México)

  • B. KRISHNAN

    (Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León-66450, México;
    Universidad Autónoma de Nuevo León, Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología, Apodaca, Nuevo León-66600, México)

Abstract

In this work, we report the formation ofIn6Se7thin films by laser irradiation ofIn/Selayered structure. Indium layer was deposited on glass substrates by thermal evaporation on which selenium thin film was grown by chemical bath deposition from an aqueous solution containing 10 ml of sodium selenosulphate (0.1 M), 1.0 ml acetic acid (25%) and 70 ml distilled water during 5 min. TheIn/Secoated glass substrates were irradiated using a 532 nm continuous laser for 3–5 min. Structure, morphology, optical and electrical properties of the irradiated thin films were analyzed using various techniques. X-ray diffraction analysis showed that the irradiated thin films wereIn6Se7of monoclinic structure. X-ray photoelectron spectroscopic study on the laser irradiated samples provided uniform relative composition ofInandSein the thin films formed after laser irradiation. The morphology, optical and electrical properties of the irradiated samples were investigated. The optical band gap of theIn6Se7thin films was 2.2 eV and also, the thin films were photoconductive.

Suggested Citation

  • R. E. Ornelas-Acosta & S. Shaji & D. Avellaneda & G. A. Castillo & T. K. Das Roy & B. Krishnan, 2013. "INDIUM SELENIDE THIN FILMS BY LASER IRRADIATION OFIn/SeLAYERED STRUCTURE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 20(06), pages 1-9.
    • Handle: RePEc:wsi:srlxxx:v:20:y:2013:i:06:n:s0218625x13500583
    DOI: 10.1142/S0218625X13500583
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