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EFFECT OF SILICON DOPING IN CVD DIAMOND FILMS FROM MICROCRYSTALLINE TO NANOCRYSTALLINE ON WC-CoSUBSTRATES

Author

Listed:
  • JIANGUO ZHANG

    (School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China)

  • YUXIAO CUI

    (School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China)

  • BIN SHEN

    (School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China)

  • FANGHONG SUN

    (School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China)

Abstract

Si-doped diamond films with variousSiconcentrations are deposited on WC-Cosubstrates using HFCVD method, with the mixture of acetone, tetraethoxysilane (TEOS) and hydrogen as the reactant source. A variety of characterizations, including FE-SEM, AFM, Raman, XRD, surface profilometer and Rockwell indentation, are conducted to systematically investigate the influence ofSiincorporation on diamond films. As theSi/Cratio from 0% to 5%, the grain size of as-deposited films decreases from 4 μm to about 50 nm, and the surface roughness reduces fromRa~ 290 nm toRa~ 180 nm. Besides, the intensity ratio ofI(111)/I(220)varies from 0.57 to 0, indicating the 〈110〉 preferred orientation of the nanocrystalline structure in the 5% doped diamond films. The silicon doping is beneficial for the formation of non-diamond carbide phases in the films, according to the Raman spectra. Moreover, the film adhesion is also improved with the increase ofSi/Cratio.

Suggested Citation

  • Jianguo Zhang & Yuxiao Cui & Bin Shen & Fanghong Sun, 2013. "EFFECT OF SILICON DOPING IN CVD DIAMOND FILMS FROM MICROCRYSTALLINE TO NANOCRYSTALLINE ON WC-CoSUBSTRATES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 20(06), pages 1-9.
    • Handle: RePEc:wsi:srlxxx:v:20:y:2013:i:06:n:s0218625x13500558
    DOI: 10.1142/S0218625X13500558
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