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Surface Morphology And X-Ray Diffraction Analysis For Silicon Nanocrystal-Based Heterostructures

Author

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  • EVAN T. SALIM

    (Applied Science Department, University of Technology, Baghdad, Iraq)

Abstract

In this work, we studied the effect of rapid thermal oxidation process on the structural and surface morphology of silicon nanocrystal-based heterostructures. PLD technique was employed in combination with rapid thermal oxidation process to form multilayers heterostructures. Results show the dependence of the surface roughness and structure on the oxidation temperature. Best surface morphology was achieved at 723 K oxidation temperature, at which, the X-ray diffraction result ensured the formation of theCu2Ophase at (111) and (002) diffraction plain with uniform porous surface.

Suggested Citation

  • Evan T. Salim, 2013. "Surface Morphology And X-Ray Diffraction Analysis For Silicon Nanocrystal-Based Heterostructures," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 20(05), pages 1-6.
    • Handle: RePEc:wsi:srlxxx:v:20:y:2013:i:05:n:s0218625x13500467
    DOI: 10.1142/S0218625X13500467
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