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GROWTH OFIn2O3ONInMETAL AND ONInSbBY THE ELECTRON IRRADIATION

Author

Listed:
  • K. HAMAIDA

    (Laboratoire Matériaux (LABMAT), ENSET d'Oran BP 1523 Oran Mnaouer, Oran 31000, Algeria)

  • M. BOUSLAMA

    (Laboratoire Matériaux (LABMAT), ENSET d'Oran BP 1523 Oran Mnaouer, Oran 31000, Algeria)

  • M. GHAFFOUR

    (Laboratoire Matériaux (LABMAT), ENSET d'Oran BP 1523 Oran Mnaouer, Oran 31000, Algeria)

  • F. BESAHRAOUI

    (Laboratoire Matériaux (LABMAT), ENSET d'Oran BP 1523 Oran Mnaouer, Oran 31000, Algeria)

  • Z. CHELAHI-CHIKR

    (Laboratoire Matériaux (LABMAT), ENSET d'Oran BP 1523 Oran Mnaouer, Oran 31000, Algeria)

  • A. OUERDANE

    (Laboratoire Matériaux (LABMAT), ENSET d'Oran BP 1523 Oran Mnaouer, Oran 31000, Algeria)

  • A. ABDELLAOUI

    (Laboratoire Matériaux (LABMAT), ENSET d'Oran BP 1523 Oran Mnaouer, Oran 31000, Algeria)

  • M. GENDRY

    (Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon Bâtiment F7 36, Avenue Guy de Collongue 69134 Ecully, France)

Abstract

Recently, the development of indium oxide such asIn2O3on the III–V semiconductors shows successful technological applications as in the gas sensor field, the emission devices, the biotechnology, etc. The indium oxideIn2O3attracted considerable research due to many methods of its synthesis. In our study, we were interested in developing the indium oxideIn2O3on theInmetal andInSbsurfaces by electron beam stimulated oxidation. The formation ofIn2O3onInSbwas advantaged by a previous treatment due to the sputtering of the surface by the argon ions at low energy 300 eV with a current density 2 μA/cm2followed by heating in UHV at 300°C. Our results were monitored by the analysis techniques including the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS) well suited to study the surface with respect to physical structure and chemical composition.

Suggested Citation

  • K. Hamaida & M. Bouslama & M. Ghaffour & F. Besahraoui & Z. Chelahi-Chikr & A. Ouerdane & A. Abdellaoui & M. Gendry, 2012. "GROWTH OFIn2O3ONInMETAL AND ONInSbBY THE ELECTRON IRRADIATION," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 19(06), pages 1-7.
    • Handle: RePEc:wsi:srlxxx:v:19:y:2012:i:06:n:s0218625x12500667
    DOI: 10.1142/S0218625X12500667
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    Keywords

    AES; EELS; oxideIn2O3; structural homogeneity;
    All these keywords.

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