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DIELECTRIC AND INTERFACE STABILITY OFLaSmO3FILMS

Author

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  • WEITAO SU

    (School of Science, Hunan University of Technology, Zhuzhou 412007, China;
    Institute of Material Physics, Hangzhou Dianzi University, Hangzhou 310018, China)

  • QIUHUI ZHUANG

    (Institute of Electronic Information and Automation, Chongqing University of Technology, Chongqing 400050, China)

  • DEXUAN HUO

    (Institute of Material Physics, Hangzhou Dianzi University, Hangzhou 310018, China)

  • BIN LI

    (Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China)

Abstract

The continuous downscaling of metal oxide semiconductor field effect transistors (MOSFET) on silicon, germanium,GaAs, etc. still demands the creation of new high-kdielectrics with even better material performance. In this research, a new ternary high-kdielectric film,LaSmO3, is deposited using electron-beam evaporation. The structure and high temperature interfacial thermal stabilities are investigated by X-ray diffraction (XRD), X-ray photon electronic spectra (XPS), infrared attenuated total reflection (ATR) and time of flight second ion mass spectroscopy (ToF-SIMS). The band gap and band offset are determined using the O1senergy loss spectra and valence band difference between film and substrate, respectively, from the XPS spectra. Capacitance-voltage (CV) and current-voltage (IV) curves are measured to give an insight of the dielectric and leakage current of this material. It is found that crystallization temperature ofLaSmO3is >1000°C. The high dielectric constant(k) = 24.6, large band gap(Eg) > 7eV and low leakage current (1.8 × 10-4A/cm2, 1 MV/cm) makeLaSmO3to be a promising high-kcandidate.

Suggested Citation

  • Weitao Su & Qiuhui Zhuang & Dexuan Huo & Bin Li, 2012. "DIELECTRIC AND INTERFACE STABILITY OFLaSmO3FILMS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 19(06), pages 1-8.
    • Handle: RePEc:wsi:srlxxx:v:19:y:2012:i:06:n:s0218625x12500643
    DOI: 10.1142/S0218625X12500643
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    Keywords

    LaSmO3; high-kdielectrics; rare earth oxide;
    All these keywords.

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