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BAND ALIGNMENT AND ATOM SEGREGATION OFLaYbO3FILMS ON SILICON

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  • WEI-TAO SU

    (The Institute of Material Physics, Hangzhou Dianzi University, Hangzhou 310018, China)

  • DE-XUAN HUO

    (The Institute of Material Physics, Hangzhou Dianzi University, Hangzhou 310018, China)

  • BIN LI

    (Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China)

Abstract

Ternary rare earth oxides are expected to be more promising high-kdielectric materials than conventional binary rare earth oxides due to higher band gap, higher permittivity and good interfacial stability. In the present study, the band alignment and atom thermal diffusion ofLaYbO3, a new ternary rare earth oxide, are studied by X-ray photoelectron spectrum (XPS) and angle-resolved XPS, respectively. The band gap value forLaYbO3crystalline film rises to 6.7 eV compared with 6.2 eV for amorphous film. Valence(ΔEv)and conduction band(ΔEc)offset areΔEv= 3.5eV,ΔEc= 1.6eV for the amorphous film andΔEv= 3.3eV,ΔEc= 2.3eV for the crystalline film. From elemental depth profile through high-klayer and silicon substrate, it is shown thatLaatom tends to diffuse into silicon substrate and piles up at oxide/silicon interface at high annealing temperature ~1000°C.

Suggested Citation

  • Wei-Tao Su & De-Xuan Huo & Bin Li, 2012. "BAND ALIGNMENT AND ATOM SEGREGATION OFLaYbO3FILMS ON SILICON," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 19(02), pages 1-6.
    • Handle: RePEc:wsi:srlxxx:v:19:y:2012:i:02:n:s0218625x12500138
    DOI: 10.1142/S0218625X12500138
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    Keywords

    LaYbO3film; band alignment; thermal diffusion;
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