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RAMAN AND OPTOELECTRONIC PROPERTIES OFZn1-xMgxOTHIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

Author

Listed:
  • Q. L. HUANG

    (Department of Applied Physics, Chongqing University, Chongqing 400044, China)

  • L. FANG

    (Department of Applied Physics, Chongqing University, Chongqing 400044, China;
    Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing 400044, China)

  • H. B. RUAN

    (Department of Applied Physics, Chongqing University, Chongqing 400044, China)

  • B. D. GUO

    (Department of Applied Physics, Chongqing University, Chongqing 400044, China)

  • F. WU

    (Department of Applied Physics, Chongqing University, Chongqing 400044, China)

  • C. Y. KONG

    (Department of Physics, Chongqing Normal University, Chongqing 400047, China)

Abstract

A series ofZn1-xMgxO(x = 0 ~ 0.16)films have been prepared on glass substrates by RF magnetron sputtering. The structure, surface morphology, composition, optical and electrical properties of the films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), Raman spectroscopy, UV-Vis spectrophotometer and Hall measurement, respectively. It reveals that the obtained films are uniform hexagonal wurtzite polycrystalline with grain size about 100 nm.The optical transmittance are over 80% and the band gap(Eg)has linear relationship withMgcontent:Eg = 1.67x + 3.274(eV)(0

Suggested Citation

  • Q. L. Huang & L. Fang & H. B. Ruan & B. D. Guo & F. Wu & C. Y. Kong, 2011. "RAMAN AND OPTOELECTRONIC PROPERTIES OFZn1-xMgxOTHIN FILMS PREPARED BY RF MAGNETRON SPUTTERING," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 18(05), pages 189-195.
    • Handle: RePEc:wsi:srlxxx:v:18:y:2011:i:05:n:s0218625x11014709
    DOI: 10.1142/S0218625X11014709
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