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STM OBSERVATION OF GRAPHENE FORMATION USINGSiC-ON-INSULATOR SUBSTRATES

Author

Listed:
  • M. NAITOH

    (Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • M. OKANO

    (Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • Y. KITADA

    (Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • Y. SASAKI

    (Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • Y. OKUBO

    (Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • D. EDAMOTO

    (Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • M. NAKAO

    (Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • I. OMURA

    (Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • T. IKARI

    (Ube National College of Technology, 2-14-1 Tokiwadai, Ube, Yamaguchi 755-8555, Japan)

Abstract

We used scanning tunneling microscopy to investigate graphene formation on anSiC-on-insulator (SiC-OI) substrate. Annealing of anSiC-OIsubstrate with anSiCthickness of 1500 nm produced a graphene layer on theSiCsurface. When the thickness of theSiCfilm was 5 nm, a graphene layer was not formed on theSiCsurface. However, after annealing a C-coveredSiC-OIsubstrate with anSiCthickness of 5 nm, a graphene layer formed on theSiO2surface.

Suggested Citation

  • M. Naitoh & M. Okano & Y. Kitada & Y. Sasaki & Y. Okubo & D. Edamoto & M. Nakao & I. Omura & T. Ikari, 2011. "STM OBSERVATION OF GRAPHENE FORMATION USINGSiC-ON-INSULATOR SUBSTRATES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 18(05), pages 163-167.
    • Handle: RePEc:wsi:srlxxx:v:18:y:2011:i:05:n:s0218625x11014643
    DOI: 10.1142/S0218625X11014643
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