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TUNABLE MAGNETIC AND ELECTRICAL PROPERTIES OFCo-DOPEDZnOFILMS BY VARYING OXYGEN PARTIAL PRESSURE

Author

Listed:
  • L. G. WANG

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China)

  • H. W. ZHANG

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China)

  • X. L. TANG

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China)

  • Y. X. LI

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China)

  • Z. Y. ZHONG

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China)

Abstract

High qualityCo-dopedZnOfilms with good reproducibility have been prepared under different oxygen partial pressure by radio-frequency magnetron sputtering. These films were characterized using numerous characterization techniques including X-ray diffraction, electrical transport, and magnetization measurements. The effect of oxygen partial pressure on the structural, magnetic, and electrical properties ofCo-dopedZnOfilms has been systematically studied. It was found that the structural, magnetic, and electrical properties ofCo-dopedZnOfilms are dependent on oxygen partial pressure. The saturated magnetization ofCo-dopedZnOfilms rapidly increases with decreasing oxygen partial pressure, whereas the resistivity decreases with decreasing oxygen partial pressure. Our findings indicate that the magnetic and electrical properties ofCo-dopedZnOfilms can be tuned by careful control of oxygen partial pressure. In addition, it was further demonstrated that the oxygen vacancy defect is absolutely necessary to induce ferromagnetic couplings inCo-dopedZnOfilms.

Suggested Citation

  • L. G. Wang & H. W. Zhang & X. L. Tang & Y. X. Li & Z. Y. Zhong, 2011. "TUNABLE MAGNETIC AND ELECTRICAL PROPERTIES OFCo-DOPEDZnOFILMS BY VARYING OXYGEN PARTIAL PRESSURE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 18(03n04), pages 91-95.
    • Handle: RePEc:wsi:srlxxx:v:18:y:2011:i:03n04:n:s0218625x11014503
    DOI: 10.1142/S0218625X11014503
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