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STUDY OF THE STRUCTURE AND PROPERTIES OF(Bi1-xCex)2Ti2O7THIN FILMS PREPARED BY CHEMICAL SOLUTION DECOMPOSITION METHOD

Author

Listed:
  • XIANGYANG JING

    (Shandong Electric Power Institute, Jinan 250002, P. R. China)

  • YANGBO HOU

    (Heze Branch of Shandong Special Equipment Inspection Institute, Heze 274000, P. R. China)

  • XIAOYANG ZHANG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • XIAOYAN QIN

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

Abstract

(Bi1-xCex)2Ti2O7thin films were grown onp-Si〈100〉 substrates by chemical solution decomposition method. The relationship between the doping levels of cerium ions and the phase transition temperatures was studied. The doping of cerium ions could improve the phase stability ofBi2Ti2O7, and the reason was comprehensively explained by the charge compensating theory. The doping ofCeions enhances the crystallization temperature, which make the crystallization difficult, so the amount of cerium ions should be kept appropriate. The dielectric properties of(Bi1-xCex)2Ti2O7thin films with differentXvalues at different temperatures and different doping levels were listed, and the latent variation tendency was found. When the annealing temperature was 650–700°C andX = 0.12or 0.16, the thin films showed better dielectric properties than the others.

Suggested Citation

  • Xiangyang Jing & Yangbo Hou & Xiaoyang Zhang & Xiaoyan Qin, 2011. "STUDY OF THE STRUCTURE AND PROPERTIES OF(Bi1-xCex)2Ti2O7THIN FILMS PREPARED BY CHEMICAL SOLUTION DECOMPOSITION METHOD," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 18(01n02), pages 17-21.
    • Handle: RePEc:wsi:srlxxx:v:18:y:2011:i:01n02:n:s0218625x11014436
    DOI: 10.1142/S0218625X11014436
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