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Characterization Of Nickel Oxide Thin Film — Dc Reactive Magnetron Sputtering

Author

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  • K. ASHOK

    (School of Advanced Materials Engineering, Chonbuk National University, Deokjin-dong 664-14, Chonju, 561-756, South Korea;
    Department of Physics and Nanotechnology, SRM University, Kattankulathur-603203, India)

Abstract

Nickel oxide(NiO)thin films were deposited on glass substrates by reactive direct current (DC) magnetron sputtering of aNitarget in anAr/O2mixture. The effect of thickness (0.2 μm, 0.4 μm and 1 μm) on the structural and surface morphological properties ofNiOthin films was investigated. These films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM). The films were cubicNiO, with preferred orientation in the (111) direction at lower deposition time (10 mins). At higher deposition time (60 mins) the preferred orientation shifted to (200) plane. Electrochemical behavior ofNiOthin films for different thickness samples were analyzed between the electrode potential ‑0.2 and 0.8 V vs scanning calomel electrode (SCE) in both anodic and cathodic directions and the current responses were measured.

Suggested Citation

  • K. Ashok, 2011. "Characterization Of Nickel Oxide Thin Film — Dc Reactive Magnetron Sputtering," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 18(01n02), pages 11-15.
    • Handle: RePEc:wsi:srlxxx:v:18:y:2011:i:01n02:n:s0218625x11014424
    DOI: 10.1142/S0218625X11014424
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