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ZnOQUANTUM DOT HYBRID LUMINESCENT RESISTS FOR NANOIMPRINT LITHOGRAPHY

Author

Listed:
  • XIAOLI LI

    (Research Institute of Micro/Nano-Science and Technology, Shanghai Jiaotong University, Shanghai 200300, P. R. China;
    Shanghai Nanotechnology Promotion Center, Shanghai 200237, P. R. China)

  • GUANGQIAN YANG

    (Institutes to Applied Chemistry, Shanghai Normal University, Shanghai 200234, P. R. China)

  • XIBING YU

    (Institutes to Applied Chemistry, Shanghai Normal University, Shanghai 200234, P. R. China)

  • WEIMIN ZHOU

    (Shanghai Nanotechnology Promotion Center, Shanghai 200237, P. R. China)

  • JING ZHANG

    (Shanghai Nanotechnology Promotion Center, Shanghai 200237, P. R. China)

  • YANBO LIU

    (Shanghai Nanotechnology Promotion Center, Shanghai 200237, P. R. China)

  • QINGKANG WANG

    (Research Institute of Micro/Nano-Science and Technology, Shanghai Jiaotong University, Shanghai 200300, P. R. China)

Abstract

We report the preparation ofZnOquantum dot hybrid luminescent resists for nanoimprint lithography. Photoluminescence spectra indicate thatZnOQDs@AMONIL have a significant increase in the luminescent intensity, an obvious blue-shift of emission peak and the Stoke's shift, revealing thatZnOQDs@AMONIL have dramatic luminescent property change instead of inhibiting or only preserving the optical properties of pureZnOQDs. The fabrication of two-dimensional (2D) photonic crystal structure on theZnOQDs@AMONIL by UV-based nanoimprint lithography is demonstrated at last, which confirms the luminescentZnOQDs@AMONIL reliable processing capabilities in wavelength-scale and envisions its promising applications in the optoelectronic micro-/nanodevices.

Suggested Citation

  • Xiaoli Li & Guangqian Yang & Xibing Yu & Weimin Zhou & Jing Zhang & Yanbo Liu & Qingkang Wang, 2010. "ZnOQUANTUM DOT HYBRID LUMINESCENT RESISTS FOR NANOIMPRINT LITHOGRAPHY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 17(05n06), pages 457-461.
    • Handle: RePEc:wsi:srlxxx:v:17:y:2010:i:05n06:n:s0218625x10014363
    DOI: 10.1142/S0218625X10014363
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