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FORMATION, STRUCTURE AND PROPERTIES OF HIGHLY ORDERED SUB-30-nmPHASE CHANGE MATERIALS (GST) NANOPARTICLE ARRAYS

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  • YUANBAO LIAO

    (National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China)

  • JIAJIA WU

    (National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China)

  • LING XU

    (National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China)

  • FEI YANG

    (National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China)

  • WENQING LIU

    (National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China)

  • JUN XU

    (National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China)

  • LIANGCAI WU

    (Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, P. R. China)

  • ZHONGYUAN MA

    (National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China)

  • KUNJI CHEN

    (National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China)

Abstract

Chalcogenide phase change materialGe1Sb2Te4(GST) nanoparticle arrays with long-range-order were fabricated by using a monolayer of self-assembled polystyrene (PS) spheres as mask. The morphology of nanoparticle arrays can be controlled via changing RIE processing conditions. Images of atomic force microscopy (AFM) and scanning electron microscopy (SEM) show that highly uniform GST nanoparticle arrays with particle density around 109cm-2were formed. The sizes of nanoparticles can be reduced to a tiny diameter in the range of 30–40 nm (top diameter). The GST nanoparticle arrays exhibit a prominent peak near 580 nm in reflectance spectra, which indicates that they possess a photonic band gap. These results confirm that GST nanoparticle arrays have a 2D periodicity and long-range order. The method of nanosphere lithograph may apply to manufacturing of high density memory devices based on phase change-based memory materials.

Suggested Citation

  • Yuanbao Liao & Jiajia Wu & Ling Xu & Fei Yang & Wenqing Liu & Jun Xu & Liangcai Wu & Zhongyuan Ma & Kunji Chen, 2010. "FORMATION, STRUCTURE AND PROPERTIES OF HIGHLY ORDERED SUB-30-nmPHASE CHANGE MATERIALS (GST) NANOPARTICLE ARRAYS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 17(04), pages 405-410.
    • Handle: RePEc:wsi:srlxxx:v:17:y:2010:i:04:n:s0218625x10014259
    DOI: 10.1142/S0218625X10014259
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    Keywords

    Phase change; Ge1Sb2Te4nanoparticle arrays;

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