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PROPERTIES OF COPPER LAYER ONSi(100)FROMCu(dmamb)2

Author

Listed:
  • SEONG-EON JIN

    (Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea)

  • DOHAN LEE

    (Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea)

  • SEUNGMOO LEE

    (Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea)

  • JONG-MUN CHOI

    (Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea)

  • BUMJOON KIM

    (Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea)

  • CHANG GYOUN KIM

    (Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, South Korea)

  • TACK-MO CHUNG

    (Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, South Korea)

  • DONG-JIN BYUN

    (Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea)

Abstract

Cuseed layer was deposited by chemical vapor deposition using newCuprecursor,Cu(dmamb)2. TheCulayers still need the barrier layer to prevent the diffusion, soTaandTiwere used for the barrier layer onSi(100). Low temperature (LT) copper buffer layer was introduced and the effect of the buffer on theCufilms was investigated. The grownCulayers were analyzed using FESEM, XRD, and four point probe measurement. TheCuseed layers were successfully deposited usingCu(dmamb)2precursor. Better thickness uniformity was obtained in theCufilms with the LTCubuffer, which lowered the electrical resistivity.

Suggested Citation

  • Seong-Eon Jin & Dohan Lee & Seungmoo Lee & Jong-Mun Choi & Bumjoon Kim & Chang Gyoun Kim & Tack-Mo Chung & Dong-Jin Byun, 2010. "PROPERTIES OF COPPER LAYER ONSi(100)FROMCu(dmamb)2," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 17(03), pages 307-310.
    • Handle: RePEc:wsi:srlxxx:v:17:y:2010:i:03:n:s0218625x10013801
    DOI: 10.1142/S0218625X10013801
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