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COMPLEX IMPEDANCE SPECTROSCOPY ONZnO-B2O3DOPED(Ba, Sr)TiO3CERAMICS

Author

Listed:
  • SANG-HO MOON

    (Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea)

  • YONG-SU HAM

    (Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea)

  • JUNG-HYUK KOH

    (Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea)

Abstract

BST ceramics with doping of 1, 3, and 5 wt.%ZnBOwere prepared by the conventional mixed oxide method and sintered at 1100°. X-ray diffraction analyses were carried out to verify the structural properties. 1, 3, and 5 wt.%ZnBOdoped BST ceramics were crystallized with weak tetragonal structure at 1100°C. The grain growth behavior and shapes were investigated by scanning electron microscopy images. The electrical properties of 1, 3, and 5 wt.%ZnBOdoped BST ceramics were investigated by impedance spectroscopy at the different temperatures (350, 375, and 400°C). Impedance spectroscopy data presented in Nyquist plot show the existence of both grain and grain boundary effects in all specimens. 1, 3, and 5 wt.%ZnBOdoped BST ceramics showed negative temperature coefficient of resistance (NTCR). Also, the capacitances and resistances of grains and grain boundaries for 1, 3, and 5 wt.% doped BST ceramics were simulated through equivalent circuit with the parallelly connected capacitors and resistors. The capacitance and resistance were decreased when temperature andZnBOdopants were increased.

Suggested Citation

  • Sang-Ho Moon & Yong-Su Ham & Jung-Hyuk Koh, 2010. "COMPLEX IMPEDANCE SPECTROSCOPY ONZnO-B2O3DOPED(Ba, Sr)TiO3CERAMICS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 17(01), pages 27-32.
    • Handle: RePEc:wsi:srlxxx:v:17:y:2010:i:01:n:s0218625x10013606
    DOI: 10.1142/S0218625X10013606
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