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PROPERTIES OF(Bi0.92Ce0.08)2Ti2O7THIN FILMS PREPARED ONSi(100)BY CHEMICAL SOLUTION DECOMPOSITION

Author

Listed:
  • GUANGHUI XU

    (College of Chemistry and Chemical Engineering, China University of Petroleum, Qingdao 266555, P. R. China)

  • XIANGYANG JING

    (Shandong Electric Power College, Jinan 250002, P. R. China)

  • YIN ZHANG

    (Physics Department, Shandong Institute of Education, Jinan 250013, P. R. China)

  • BAIBIAO HUANG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

Abstract

(Bi0.92Ce0.08)2Ti2O7thin films have been successfully prepared on P-typeSi(100)substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability ofBi2Ti2O7was improved afterCeions were doped. The dielectric constants of(Bi0.92Ce0.08)2Ti2O7thin films annealed at 650° and 700°C were higher than that ofBi2Ti2O7withoutCemodification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in theC–Vloops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed thatCe-dopedBi2Ti2O7thin films had potential for DRAM and MOS applications.

Suggested Citation

  • Guanghui Xu & Xiangyang Jing & Yin Zhang & Baibiao Huang, 2009. "PROPERTIES OF(Bi0.92Ce0.08)2Ti2O7THIN FILMS PREPARED ONSi(100)BY CHEMICAL SOLUTION DECOMPOSITION," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 16(06), pages 869-873.
    • Handle: RePEc:wsi:srlxxx:v:16:y:2009:i:06:n:s0218625x09013414
    DOI: 10.1142/S0218625X09013414
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