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STRUCTURE AND FERROELECTRIC PROPERTIES OFBi0.95La0.05FeO3FILM ON INDIUM TIN OXIDE (ITO)/GLASS SUBSTRATE

Author

Listed:
  • QIANG GAO

    (State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China)

  • WEI ZHENG

    (State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China)

Abstract

Bi0.95La0.05FeO3(BLFOx=0.05)film was fabricated on indium tin oxide/glass substrate using a metal organic decomposition method. No secondary phase can be observed in the well crystallized and predominantly (110)-orientedBLFOx=0.05film. Well-saturatedP - Ehysteresis loops with the remanent polarization of 60.7 μC/cm2can be obtained inBLFOx=0.05film due to the low leakage currents as well as the preferred orientation of the (110) peak. The content of oxygen vacancies in the film is considered to be the dominant factor affecting the asymmetry ferroelectric properties and leakage currents.

Suggested Citation

  • Qiang Gao & Wei Zheng, 2009. "STRUCTURE AND FERROELECTRIC PROPERTIES OFBi0.95La0.05FeO3FILM ON INDIUM TIN OXIDE (ITO)/GLASS SUBSTRATE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 16(04), pages 503-506.
    • Handle: RePEc:wsi:srlxxx:v:16:y:2009:i:04:n:s0218625x09013037
    DOI: 10.1142/S0218625X09013037
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