DEPOSITION OF SINGLE-PHASECuInSe2THIN FILMS UNDER LOW VACUUM LEVEL BY A TWO-STAGE GROWTH TECHNIQUE

Single-phaseCuInSe2films were grown by high vapor selenization ofCuInalloy precursors within a partially closed graphite box. TheCuInprecursors were prepared usingCuxInyalloy targets with different composition rates under low vacuum level by a homemade sputtering system. TheCuandIncomposition rates of the used targets are 11:9, 10:10, and 9:11, respectively. The metallic precursor films were selenized using a two-step temperature profile, i.e. at 250°C and 400–500°C, respectively. The influence of the temperature at the second selenization step on the quality of the CIS absorbing layers was investigated. The CIS films were characterized by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis, and Raman spectroscopy. The deposited CIS absorbers selenized at a high temperature of 500°C for 30 min exhibited a single-phase chalcopyrite structure with a preferential orientation in the (112) direction. These layers display uniform, large, and densely packed crystals with a grain size of about 3–5 μm. Cadmium sulfide buffer layer was manufactured by chemical bath deposition method. BilayersZnO/ZnO:Alwere prepared by RF magnetron sputtering deposition. CIS solar cells with an efficiency of about 6.5% were produced without antireflective films. The method to fabricate CIS solar cells by a combination of the low vacuum sputtering deposition and the graphite box selenization process has provided a simple control process and shown a promising potential for developing high efficient and low-costCuInSe2solar cells.