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Effect Of Temperature On Self-Assembly Of Diamond-Like Carbon (Dlc) Grown By Plasma Enhanced Chemical Vapor Deposition (Pecvd)

Author

Listed:
  • OJAS MAHAPATRA

    (Nanotechnology Research Center, SRM University, Kattankulathur, Chennai 603203, India)

  • R. MAHESWARAN

    (Department of Physics, SRM University, Kattankulathur, Chennai 603203, India)

  • N. SATYA VIJAYA KUMAR

    (Nanotechnology Research Center, SRM University, Kattankulathur, Chennai 603203, India)

  • K. R. GANESH

    (Nanotechnology Research Center, SRM University, Kattankulathur, Chennai 603203, India)

  • C. GOPALAKRISHNAN

    (Nanotechnology Research Center, SRM University, Kattankulathur, Chennai 603203, India)

  • D. JOHN THIRUVADIGAL

    (Department of Physics, SRM University, Kattankulathur, Chennai 603203, India)

  • S. V. KASMIR RAJA

    (Nanotechnology Research Center, SRM University, Kattankulathur, Chennai 603203, India)

Abstract

Diamond-like carbon nanostructures were prepared using Plasma enhanced chemical vapor deposition (PECVD). Temperature dependence of self-assembly of carbon nanostructures is noted. Carbon and silicon exhibit significant lattice mismatch and during the self-assembly, stacking of carbon atoms takes place which results in conic projections. The carbon nanostructures were prepared at 600°C and 100 W RF power and were subjected to a cooling treatment. Argon and Methane were used as reactant gases. The formation of nanostructures did not use any catalyst. The surface morphology and roughness analysis was carried by Atomic Force microscopy. The nanocones were characterized by X Ray Diffractometer and Raman Spectroscopy.

Suggested Citation

  • Ojas Mahapatra & R. Maheswaran & N. Satya Vijaya Kumar & K. R. Ganesh & C. Gopalakrishnan & D. John Thiruvadigal & S. V. Kasmir Raja, 2009. "Effect Of Temperature On Self-Assembly Of Diamond-Like Carbon (Dlc) Grown By Plasma Enhanced Chemical Vapor Deposition (Pecvd)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 16(03), pages 337-341.
    • Handle: RePEc:wsi:srlxxx:v:16:y:2009:i:03:n:s0218625x09012688
    DOI: 10.1142/S0218625X09012688
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