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Surface Metalization On The Photo-Emission, Photo-Absorption And Core-Level Shift Of Nanosolid Silicon

Author

Listed:
  • LIKUN PAN

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, 200062, China)

  • HAIBO LI

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, 200062, China)

  • ZHUO SUN

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, 200062, China)

  • CHANGQING SUN

    (School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore)

Abstract

Cu,Al, andTifilms of ~ 10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization ofSiwafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that before annealing justCu-deposited sample exhibited PL blueshift, PA redshift, andSi-2plevel shift due to theCudiffusion at the surface of PS. While after annealing,Cu- andTi-deposited samples exhibited obvious PA redshift andSi-2plevel shift, which arise from the crystal field variation due to the formation ofCu/Tisilicides at the surface as well as the conduction electronic transportation.

Suggested Citation

  • Likun Pan & Haibo Li & Zhuo Sun & Changqing Sun, 2009. "Surface Metalization On The Photo-Emission, Photo-Absorption And Core-Level Shift Of Nanosolid Silicon," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 16(02), pages 265-270.
    • Handle: RePEc:wsi:srlxxx:v:16:y:2009:i:02:n:s0218625x09012573
    DOI: 10.1142/S0218625X09012573
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