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ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPEDGaAs/AlxGa1-xAsSYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD

Author

Listed:
  • F. UNGAN

    (Cumhuriyet University, Physics Department, 58140 Sivas, Turkey)

  • E. KASAPOGLU

    (Cumhuriyet University, Physics Department, 58140 Sivas, Turkey)

  • H. SARI

    (Cumhuriyet University, Physics Department, 58140 Sivas, Turkey)

  • I. SÖKMEN

    (Dokuz Eylül University, Physics Department, 35160 Izmir, Turkey)

Abstract

In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and asymmetricGaAs/Al0.33Ga0.67Asdouble quantum wells. Electronic properties of the system are determined by the solving the Schrödinger and Poisson equations self-consistently in the effective-mass approximation. The application of an electric field in the growth direction of the system causes a polarization of the carrier distribution and shifts the sub-band energies, which may be used to control and modulate intensity output devices. In an asymmetric double-quantum-well structure, the effects mentioned above appear more clearly.

Suggested Citation

  • F. Ungan & E. Kasapoglu & H. Sari & I. Sökmen, 2009. "ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPEDGaAs/AlxGa1-xAsSYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 16(01), pages 105-110.
    • Handle: RePEc:wsi:srlxxx:v:16:y:2009:i:01:n:s0218625x09012366
    DOI: 10.1142/S0218625X09012366
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