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EFFECT OFCe-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRICBi2Ti2O7THIN FILMS

Author

Listed:
  • XIANGYANG JING

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • BAIBIAO HUANG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • SHUSHAN YAO

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • QI ZHANG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • ZEYAN WANG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • PENG WANG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • LIREN ZHENG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

Abstract

Ce-dopedBi2Ti2O7thin films have been successfully prepared on P-typeSisubstrates by a chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase ofCe-dopedBi2Ti2O7was more stable than that ofBi2Ti2O7withoutCesubstitution. The films exhibited good insulating properties at room temperature. The dielectric constant of the films annealed at 700°C at 100 kHz was 168 and the dissipation factor was 0.038. All these results showed thatCe-dopedBi2Ti2O7thin films could be used as storage capacitors in DRAM and MOS.

Suggested Citation

  • Xiangyang Jing & Baibiao Huang & Shushan Yao & Qi Zhang & Zeyan Wang & Peng Wang & Liren Zheng, 2008. "EFFECT OFCe-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRICBi2Ti2O7THIN FILMS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(06), pages 799-803.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:06:n:s0218625x08012177
    DOI: 10.1142/S0218625X08012177
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