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Analysis Of Voltage Signals By Flicker Noise Methodology Applied On Porous Silicon Films Growth

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  • ARTURO RAMIREZ-PORRAS

    (Centro de Investigación en Ciencia e Ingenierí a de Materiales (CICIMA) and Escuela de Fí sica, Universidad de Costa Rica, San Pedro 2060, Costa Rica)

Abstract

The Flicker Noise Analysis methodology is applied on voltage signals recorded when the electrochemical etching of crystalline surfaces of silicon is performed. The porous silicon material resulting from this procedure is composed of nanocrystals possessing remarkable properties which can be employed in the development of optical, electronic, or biological sensor devices. As a result of the analysis, two dynamic processes during the electrochemical reaction have been identified: one related to the dissolution of the crystalline matrix and the other related to the porous morphology itself.

Suggested Citation

  • Arturo Ramirez-Porras, 2008. "Analysis Of Voltage Signals By Flicker Noise Methodology Applied On Porous Silicon Films Growth," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(05), pages 613-617.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:05:n:s0218625x08011792
    DOI: 10.1142/S0218625X08011792
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