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EFFECTS OF THERMAL EXPANSION COEFFICIENT MISMATCH ON STRUCTURE AND ELECTRICAL PROPERTIES OFTiO2FILM DEPOSITED ONSiSUBSTRATE

Author

Listed:
  • CHEN YANG

    (State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)

  • HUIQING FAN

    (State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)

  • SHAOJUN QIU

    (State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)

  • YINGXUE XI

    (State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)

  • JIN CHEN

    (State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)

Abstract

Effects of thermal expansion coefficient (CTE) mismatch on structure and electrical properties ofTiO2film deposited onSisubstrate by ion beam assistant electron beam evaporation have been investigated. Because of a high CTE mismatch betweenTiO2film andSisubstrate, microcracks appeared in theTiO2film deposited directly onSisubstrate after the as-deposited film was annealed at 600°C. In order to decrease the CTE mismatch,TiO2film was deposited onSisubstrate which was covered by aZrO2thin layer. As a result, crack–freeTiO2film after annealed at the same temperature was obtained. Meanwhile, corresponding to the crack–free structure, theTiO2thin film has more stable dielectric properties and excellentI–Vcharacteristics.

Suggested Citation

  • Chen Yang & Huiqing Fan & Shaojun Qiu & Yingxue Xi & Jin Chen, 2008. "EFFECTS OF THERMAL EXPANSION COEFFICIENT MISMATCH ON STRUCTURE AND ELECTRICAL PROPERTIES OFTiO2FILM DEPOSITED ONSiSUBSTRATE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(04), pages 487-491.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:04:n:s0218625x08011639
    DOI: 10.1142/S0218625X08011639
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