IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v15y2008i03ns0218625x08011408.html
   My bibliography  Save this article

ADSORPTION AND DISSOCIATION OFPH3ONSiGe(100)(2 × 1) SURFACE

Author

Listed:
  • MUSTAFA TÜRKMENOĞLU

    (Physics Department, Middle East Technical University, Ankara 06531, Turkey)

  • ŞENAY KATIRCIOĞLU

    (Physics Department, Middle East Technical University, Ankara 06531, Turkey)

Abstract

The most stable structures for the adsorption and dissociation of phosphine (PH3) onSiGe(100)(2 × 1) surface have been investigated by relative total energy calculations based on density functional theory. According to the optimization calculations,PH3is adsorbed on theSi(down) andGe(down) site of theGe–SiandGe–Gedimers onSiGesurface, respectively. ThePH2andHproducts have been found to be thermodynamically favored in the dissociation path ofPH3onSiGesurface when the system is thermally activated. AlthoughPH3is adsorbed on theGe–GeandGe–Sidimers directly, it dissociates on theSiGesurface by passing through a transition state. The asymmetricGe–SiandGe–Gedimers onSiGesurface are found to be approximately symmetric after the dissociation ofPH3on the surface. The present work has showed thatPH2prefers to be adsorbed onGesite of theGe–Sidimer. Therefore, the adsorption ofPH2onGesite of theGe–Sidimer, whilePH3being dissociated on theSisite, has indicated the migration ofPH2onSiGesurface.

Suggested Citation

  • Mustafa Türkmenoğlu & Şenay Katircioğlu, 2008. "ADSORPTION AND DISSOCIATION OFPH3ONSiGe(100)(2 × 1) SURFACE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(03), pages 307-317.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:03:n:s0218625x08011408
    DOI: 10.1142/S0218625X08011408
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X08011408
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X08011408?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:15:y:2008:i:03:n:s0218625x08011408. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.