Author
Listed:
- CHEN YANG
(State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)
- HUIQING FAN
(State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)
- SHAOJUN QIU
(State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)
- YINGXUE XI
(State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)
- YUNFEI FU
(State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China)
Abstract
La2O3films were deposited onSi(100)substrates by ion beam assistant electron beam evaporation and were annealed at 450–900°C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600°C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10-7to 10-4A/cm2with the rise in annealing temperature. The film annealed at 600°C with cubic structure had a relatively high dielectric constant of ~18.
Suggested Citation
Chen Yang & Huiqing Fan & Shaojun Qiu & Yingxue Xi & Yunfei Fu, 2008.
"OPTICAL AND ELECTRICAL PROPERTIES OFLa2O3FILMS PREPARED BY ION BEAM ASSISTANT ELECTRON BEAM EVAPORATION,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(03), pages 271-275.
Handle:
RePEc:wsi:srlxxx:v:15:y:2008:i:03:n:s0218625x08011354
DOI: 10.1142/S0218625X08011354
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