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NANOSTRUCTURAL ANALYSIS OF AGaN-BASED VIOLET LASER DIODE

Author

Listed:
  • J. R. YANG

    (Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan)

  • H. L. TSAI

    (Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan)

  • T. Y. WANG

    (Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan)

  • H. W. YEN

    (Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan)

  • C. Y. CHEN

    (Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan)

  • W. C. LI

    (Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan)

  • H. R. CHEN

    (Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan)

Abstract

The nanostructure of p-typeAlGaN/GaNstrained-layer superlattice (SLS) cladding in aGaN-based violet laser diode (LD) has been investigated by high-angle annular dark-field (HAADF) scanning-transmission electron microscopy (STEM). The pairs of theAlGaNandGaNlayers in SLS cladding are observed, where theAlGaNandGaNlayers appear as dark and bright bands. It is also found that the threading dislocations disappeared within the SLS; this evidence manifests the role of SLS in suppressing threading dislocation propagation.

Suggested Citation

  • J. R. Yang & H. L. Tsai & T. Y. Wang & H. W. Yen & C. Y. Chen & W. C. Li & H. R. Chen, 2008. "NANOSTRUCTURAL ANALYSIS OF AGaN-BASED VIOLET LASER DIODE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(01n02), pages 189-193.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x08011202
    DOI: 10.1142/S0218625X08011202
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