IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v15y2008i01n02ns0218625x0801107x.html
   My bibliography  Save this article

EFFECTS OF OPERATING CONDITIONS ON THE DEPOSITION OFGaAsIN A VERTICAL CVD REACTOR

Author

Listed:
  • JAE-SANG BAEK

    (School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Korea;
    Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea)

  • JIN-HYO BOO

    (Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea)

  • YOUN-JEA KIM

    (School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Korea;
    Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea)

Abstract

A numerical study is needed to gain insight into the growth mechanism and improve the reactor design or optimize the deposition condition in chemical vapor deposition (CVD). In this study, we have performed a numerical analysis of the deposition of gallium arsenide(GaAs)from trimethyl gallium (TMG) and arsine in a vertical CVD reactor. The effects of operating parameters, such as the rotation velocity of susceptor, inlet velocity, and inlet TMG fraction, are investigated and presented. The three-dimensional model which is used in this investigation includes complete coupling between the thermal-fluid transport and species transport with chemical reaction.

Suggested Citation

  • Jae-Sang Baek & Jin-Hyo Boo & Youn-Jea Kim, 2008. "EFFECTS OF OPERATING CONDITIONS ON THE DEPOSITION OFGaAsIN A VERTICAL CVD REACTOR," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(01n02), pages 111-116.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x0801107x
    DOI: 10.1142/S0218625X0801107X
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X0801107X
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X0801107X?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x0801107x. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.