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COMPARISON OF MAGNETIC PROPERTY OFCu-,Al-, ANDLi-DOPEDZnODILUTE MAGNETIC SEMICONDUCTOR THIN FILMS

Author

Listed:
  • L. H. VAN

    (NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, SG 117542, Singapore)

  • J. DING

    (Department of Material Science and Engineering, National University of Singapore, SG 117678, Singapore)

  • M. H. HONG

    (Department of Electrical and Computer Engineering, National University of Singapore, SG 117576, Singapore)

  • Z. C. FAN

    (Division of Mathematical Sciences, and School of Physical & Mathematical Sciences, Nanyang Technological University, SG 637616, Singapore)

  • L. WANG

    (Division of Mathematical Sciences, and School of Physical & Mathematical Sciences, Nanyang Technological University, SG 637616, Singapore)

Abstract

The properties ofCu-,Al-, andLi-dopedZnOdilute magnetic semiconductor (DMS) have been analyzed and compared. Zincite with wurtzite structures have been synthesized successfully onSiO2(101) andSiO2(110) substrates in both theCu–ZnOandLi–ZnODMS. The highly texturedZnO(002) peaks were able to form in theCu–ZnOsystem at 400°C. However, it formed at even much lower temperature in theLi–ZnOsystem, that is only 25°C.ZnO(002) peaks in both systems were formed without any impurity phases. However, no crystalline structure is synthesized in theAl–ZnOsystem. The thin films formed are amorphous. The structural and related magnetic properties of the films were analyzed by XRD, AFM, and VSM. The films were found to be at their highest magnetism at the value of 3.1 emu/cm3forCo–ZnOand 2.5 emu/cm3forLi–ZnO, synthesized at 400°C, and under1 × 10-4Torr oxygen partial pressure.

Suggested Citation

  • L. H. Van & J. Ding & M. H. Hong & Z. C. Fan & L. Wang, 2008. "COMPARISON OF MAGNETIC PROPERTY OFCu-,Al-, ANDLi-DOPEDZnODILUTE MAGNETIC SEMICONDUCTOR THIN FILMS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(01n02), pages 81-85.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x08011007
    DOI: 10.1142/S0218625X08011007
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