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DIELECTRIC AND FERROELECTRIC BEHAVIORS OF NOVELPbTiO3/NiFe2O4THIN FILMS PREPARED BY SOL–GEL METHOD

Author

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  • YANLING DONG

    (The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China)

  • XIN WANG

    (The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China)

  • XIAOYAN CHAI

    (The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China)

  • WENJIAN WENG

    (The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China)

  • GAORONG HAN

    (The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China)

  • PIYI DU

    (The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China;
    Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China)

Abstract

Ferroelectric/ferromagnetic (ME) biphase composite thin films with the type of(1–x)PbTiO3(PT)–xNiFe2O4(NFO)(x = 1–9)were successfully formedin situby sol–gel process. The dielectric and ferroelectric behaviors of the composite thin films were investigated. The asymmetrical hysteresis loops of the composite arise from the leak current due to low resistivity of NFO. The stronger stress in the thin films due to the strong conjunction between PT and the substrate contributes to the increase (decrease) of the coercive force (the remanent polarization) with increasing the content of PT. The ME composites exhibit slight percolation effect. The high dielectric constant near the percolation threshold is attributed to the "micro-capacitors" in the composite thin films.

Suggested Citation

  • Yanling Dong & Xin Wang & Xiaoyan Chai & Wenjian Weng & Gaorong Han & Piyi Du, 2008. "DIELECTRIC AND FERROELECTRIC BEHAVIORS OF NOVELPbTiO3/NiFe2O4THIN FILMS PREPARED BY SOL–GEL METHOD," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(01n02), pages 7-11.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x08010865
    DOI: 10.1142/S0218625X08010865
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