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Effect Of Europium Doping On Electrical Properties Of Pzt Films

Author

Listed:
  • CHUNYU SHAO

    (School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, PR China)

  • JING WANG

    (School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, PR China;
    Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116023, China)

  • WEIJIE DONG

    (School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, PR China;
    Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116023, China)

  • YAN CUI

    (Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116023, China;
    MST Research Center, Dalian University of Technology, Dalian 116023, PR China)

  • MIN JI

    (School of Chemical Engineering, Dalian University of Technology, Dalian 116023, PR China)

Abstract

Samples of lead zirconate titanatePb(Zr0.53Ti0.47)O3with europium(Eu)doping concentration of 0, 0.5, 1.5, 3 mol% (PEZT) were fabricated by sol–gel method. XRD spectra showed that the introduction ofEuinto PZT favored the growth of (100) orientation. With 3%Eucontent, the preferential orientation of the film converted from (111) to (100) orientation. TheEu-doped PZT films exhibited lower leakage current less than 10-9A/cm2and the behavior of leakage current was discussed in terms of defect chemistry theorem. WhenEucontent was 1.5%, the remanent polarization(Pr)increased to 28 μ C/cm2which was much higher than that of undoped PZT film.

Suggested Citation

  • Chunyu Shao & Jing Wang & Weijie Dong & Yan Cui & Min Ji, 2008. "Effect Of Europium Doping On Electrical Properties Of Pzt Films," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(01n02), pages 1-5.
  • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x08010853
    DOI: 10.1142/S0218625X08010853
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