Author
Listed:
- CHUNYU SHAO
(School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, PR China)
- JING WANG
(School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, PR China;
Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116023, China)
- WEIJIE DONG
(School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, PR China;
Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116023, China)
- YAN CUI
(Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116023, China;
MST Research Center, Dalian University of Technology, Dalian 116023, PR China)
- MIN JI
(School of Chemical Engineering, Dalian University of Technology, Dalian 116023, PR China)
Abstract
Samples of lead zirconate titanatePb(Zr0.53Ti0.47)O3with europium(Eu)doping concentration of 0, 0.5, 1.5, 3 mol% (PEZT) were fabricated by sol–gel method. XRD spectra showed that the introduction ofEuinto PZT favored the growth of (100) orientation. With 3%Eucontent, the preferential orientation of the film converted from (111) to (100) orientation. TheEu-doped PZT films exhibited lower leakage current less than 10-9A/cm2and the behavior of leakage current was discussed in terms of defect chemistry theorem. WhenEucontent was 1.5%, the remanent polarization(Pr)increased to 28 μ C/cm2which was much higher than that of undoped PZT film.
Suggested Citation
Chunyu Shao & Jing Wang & Weijie Dong & Yan Cui & Min Ji, 2008.
"Effect Of Europium Doping On Electrical Properties Of Pzt Films,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(01n02), pages 1-5.
Handle:
RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x08010853
DOI: 10.1142/S0218625X08010853
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