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Formation And Characterization Of3c-Sicby Carbon-Ion Implantation Into Silicon With A Mevva Ion Source

Author

Listed:
  • Y. Z. WAN

    (School of Materials Science and Engineering, Tianjin University, Tianjin 300072, P. R. China)

  • G. Y. XIONG

    (College of Mechanical and Electrical Engineering, East China Jiaotong University, Nanchang, Jiangxi 330013, P. R. China)

  • F. SONG

    (Photonics Center, Nankai University, Tianjin 300071, P. R. China)

  • H. L. LUO

    (School of Materials Science and Engineering, Tianjin University, Tianjin 300072, P. R. China)

  • Y. HUANG

    (School of Materials Science and Engineering, Tianjin University, Tianjin 300072, P. R. China)

  • F. HE

    (School of Materials Science and Engineering, Tianjin University, Tianjin 300072, P. R. China)

  • L. B. GUO

    (School of Materials Science and Engineering, Tianjin University, Tianjin 300072, P. R. China)

  • Y. L WANG

    (School of Materials Science and Engineering, Tianjin University, Tianjin 300072, P. R. China)

Abstract

Crystalline cubic silicon carbide(3C-SiC)surface layers have been prepared by carbon-ion implantation into silicon (100) using a MEVVA ion source and subsequent annealing at 1250°C for 2 h. The obtained films have been characterized by SEM, XRD, and micro-Raman analysis. The effect of carbon-ion dose on the surface morphology of the ion-implanted samples has been investigated. Rectangular patterns are observed on the surfaces of carbon-ion-implanted silicon substrates. It is found that the amount of rectangular patterns increases with ion dose, suggesting the dependence of surface morphology on ion dose. The formation of rectangular patterns has been elucidated in this paper.

Suggested Citation

  • Y. Z. Wan & G. Y. Xiong & F. Song & H. L. Luo & Y. Huang & F. He & L. B. Guo & Y. L Wang, 2007. "Formation And Characterization Of3c-Sicby Carbon-Ion Implantation Into Silicon With A Mevva Ion Source," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(06), pages 1103-1106.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:06:n:s0218625x07010573
    DOI: 10.1142/S0218625X07010573
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