IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v14y2007i04ns0218625x07010305.html
   My bibliography  Save this article

ELECTRONIC PARAMETER AND SUBBAND STRUCTURE VARIATIONS DUE TO AN EMBEDDEDAlNPOTENTIAL BARRIER LAYER INAl0.3Ga0.7N/GaNHETEROSTRUCTURES

Author

Listed:
  • S. M. HAN

    (Information Display Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea)

  • S. Y. KIM

    (Information Display Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea)

  • D. C. CHOO

    (Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea)

  • J. I. JUNG

    (Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea)

  • T. W. KIM

    (Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea)

  • K. H. YOO

    (Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea)

  • Y. H. JO

    (Quantum Material Research Team, Korea Basic Science Institute, Daejon 305-333, Korea)

  • M. H. JUNG

    (Quantum Material Research Team, Korea Basic Science Institute, Daejon 305-333, Korea)

  • H. I. CHO

    (Department of Electric and Electronic Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-ku, Daegu 702-701, Korea)

  • J. H. LEE

    (Department of Electric and Electronic Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-ku, Daegu 702-701, Korea)

  • L. R. RAM-MOHAN

    (Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, USA)

Abstract

Carrier density of a two-dimensional electron gas (2DEG) inAl0.3Ga0.7N/GaNandAl0.3Ga0.7N/AlN/GaNheterostructures was investigated by performing Shubnikov-de Haas (SdH) measurements. The angular-dependent SdH measurements and the fast Fourier transformation results for the SdH data indicated 2DEG occupation of one subband in the triangular potential wells. The carrier densities of the 2DEGs in theAl0.3Ga0.7N/AlN/GaNand theAl0.3Ga0.7N/GaNheterostructures at 1.5 K, determined from the SdH data, were 1.28 × 1013and 1.12 × 1013cm-2, respectively. The electron carrier density of the 2DEG in theAl0.3Ga0.7N/GaNheterostructure with anAlNembedded potential barrier layer was larger than that in theAl0.3Ga0.7N/GaNheterostructure. The electronic subband energies, the wave functions, and the Fermi energies in theAl0.3Ga0.7N/AlN/GaNandAl0.3Ga0.7N/GaNheterostructures were calculated by using a self-consistent method taking into account spontaneous and piezoelectric polarizations.

Suggested Citation

  • S. M. Han & S. Y. Kim & D. C. Choo & J. I. Jung & T. W. Kim & K. H. Yoo & Y. H. Jo & M. H. Jung & H. I. Cho & J. H. Lee & L. R. Ram-Mohan, 2007. "ELECTRONIC PARAMETER AND SUBBAND STRUCTURE VARIATIONS DUE TO AN EMBEDDEDAlNPOTENTIAL BARRIER LAYER INAl0.3Ga0.7N/GaNHETEROSTRUCTURES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(04), pages 807-811.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07010305
    DOI: 10.1142/S0218625X07010305
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X07010305
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X07010305?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07010305. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.