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HOMO-EPITAXIAL GROWTH ONZnOSUBSTRATE BY MO-CVD USING(C5H7O2)2

Author

Listed:
  • KOICH HAGA

    (Sendai National College of Technology, Aayasi Tyuoh, Aoba-ku, Sendai 989-3128, Japan)

  • TOETSU SHISHIDO

    (Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan)

  • KAZUO NAKAJIMA

    (Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan)

  • TAKAHIRO MATSUNAGA

    (Tosoh Corporation, Yamaguchi 746-8501, Japan)

Abstract

High quality homo-epitaxialZnOfilms were grown onZn-terminated surfaces ofZnO(0001) single-crystal substrates with high-temperature annealing andAr+ion etching. These films were prepared by low-pressure MO-CVD using zinc acetylacetonate(C5H7O2)2and oxygen as source materials. High qualityZnO(0001) substrate was synthesized by the hydrothermal technique. The atomically flat surface without scratches was obtained by high temperature annealing at 800°C–1300°C in oxygen atmosphere.Ar+ion etching for the surface ofZnOsubstrates was critically important to the growth ofZnOfilms with good crystallinity. The epitaxial film and theZnOsubstrate were characterized using reflection high-energy electron diffraction, atomic force microscope, and X-ray photoelectron spectroscopy.

Suggested Citation

  • Koich Haga & Toetsu Shishido & Kazuo Nakajima & Takahiro Matsunaga, 2007. "HOMO-EPITAXIAL GROWTH ONZnOSUBSTRATE BY MO-CVD USING(C5H7O2)2," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(04), pages 783-787.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07010263
    DOI: 10.1142/S0218625X07010263
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