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DISLOCATION DENSITY INSrTiO3FILM GROWN ONDyScO3BY PULSE LASER ABLATION

Author

Listed:
  • Z. Y. ZHAI

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • X. Z. LI

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • S. S. ZHI

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • X. S. WU

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • J. H. HAO

    (Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China)

  • J. GAO

    (Department of Physics, The University of Hong Kong, Pokflam Road, Hong Kong, China)

Abstract

SrTiO3films are fabricated onDyScO3substrates by pulse laser deposition.In situX-ray diffraction (XRD) is used to characterize the thermal expansion coefficient at low temperature. The abnormal behavior in lattice parameter at 80 K may be the hint of a phase transition. High resolution XRD is performed to detect the two kinds of dislocations, i.e. screw and edge. Results show that the density of edge dislocation is a little larger than that of the screw one. The total dislocation density has the order of about 108cm-2. Edge dislocation density decreases with the increase of the film thickness. We argue that the ratio between these two dislocation densities results in the growth mode of the film.

Suggested Citation

  • Z. Y. Zhai & X. Z. Li & S. S. Zhi & X. S. Wu & J. H. Hao & J. Gao, 2007. "DISLOCATION DENSITY INSrTiO3FILM GROWN ONDyScO3BY PULSE LASER ABLATION," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(04), pages 779-782.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07010251
    DOI: 10.1142/S0218625X07010251
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