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FABRICATION AND PROPERTIES OFLa0.8Ca0.2MnO3FIELD EFFECT TRANSISTORS

Author

Listed:
  • WANG LI FENG

    (Department of Physics, Southeast University, Nanjing 211189, P. R. China)

  • ZHANG WEI WEI

    (Department of Physics, Southeast University, Nanjing 211189, P. R. China)

  • ZHOU YU QING

    (Department of Physics, Southeast University, Nanjing 211189, P. R. China)

  • ZHU MING

    (Department of Physics, Southeast University, Nanjing 211189, P. R. China)

Abstract

The inverted-gate colossal magnetoresistance-field-effect-transistors (CMR-FETs) were designed and successfully fabricated on theSisubstrate by using semiconductor techniques. The studies on the capacitance properties were carried out under different temperatures, different frequencies, and different gate biases. The results indicate thatLa0.8Ca0.2MnO3is the typicalp-type semiconductor. It was shown that the capacitance increases with the increasing of the temperature under certain gate bias. The sudden increase of the capacitance at 160 K was observed and needeed to be studied further. Meanwhile the capacitance decreased as the frequency increased with first order exponential decay fitting.

Suggested Citation

  • Wang Li Feng & Zhang Wei Wei & Zhou Yu Qing & Zhu Ming, 2007. "FABRICATION AND PROPERTIES OFLa0.8Ca0.2MnO3FIELD EFFECT TRANSISTORS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(04), pages 745-749.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07010184
    DOI: 10.1142/S0218625X07010184
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