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THE STUDY ON THE ELECTRIC FIELD EFFECT IN THELa0.8Ca0.2MnO3/PbZr0.2Ti0.8O3/SiHETEROSTRUCTURE

Author

Listed:
  • ZHANG WEI WEI

    (Physics Department, Southeast University, Nanjing 211189, P. R. China)

  • WANG LI FENG

    (Physics Department, Southeast University, Nanjing 211189, P. R. China)

  • ZHOU YU QING

    (Physics Department, Southeast University, Nanjing 211189, P. R. China)

  • ZHU MING

    (Physics Department, Southeast University, Nanjing 211189, P. R. China)

Abstract

A detailed quantitative investigation of the current–voltage(I–V)relationship under the low and the high electric field in theLa0.8Ca0.2MnO3/PbZr0.2Ti0.8O3/Siheterostructure over a wide range of temperature was performed. The effective mobility and carrier concentration were then calculated through the electric field effect theory. The differential mobility can be modulated and enhanced significantly by the gate voltage in the vicinity of the metal–insulator-transition temperature. The carrier concentration is proportional to the applied gate voltage. At the room temperature the carrier concentration is found to be2.5 × 10-9under 10 V bias and remains almost unchanged at different temperatures.

Suggested Citation

  • Zhang Wei Wei & Wang Li Feng & Zhou Yu Qing & Zhu Ming, 2007. "THE STUDY ON THE ELECTRIC FIELD EFFECT IN THELa0.8Ca0.2MnO3/PbZr0.2Ti0.8O3/SiHETEROSTRUCTURE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(04), pages 617-621.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07009785
    DOI: 10.1142/S0218625X07009785
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